VS-GT100DA120UF

VS-GT100DA120UF

$35.09
  • Description:IGBT MOD 1200V 187A 890W SOT227
  • Series:HEXFRED®

SKU:450d107c3442 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 1200V 187A 890W SOT227
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:Trench
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.55V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):187 A
  • Power - Max:890 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:6.15 nF @ 25 V

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VS-GT100DA120UF

Overview

The VS-GT100DA120UF is a Vishay Semiconductors Ultrafast IGBT module featuring Trench technology and an integrated antiparallel diode. It provides a collector-emitter voltage of 1200 V, with continuous collector currents of 187 A at 25 °C and 100 A at 108 °C. The typical on-state voltage is 1.93 V at 100 A and 25 °C. Operating within a junction temperature range of -40 °C to +150 °C, the device utilizes a fully isolated SOT-227 package designed for screw mounting.

Feature Summary

  • Features Trench IGBT technology for high-speed switching and low internal inductance.
  • Incorporates HEXFRED® diodes characterized by low reverse recovery charge and energy.
  • Includes a positive VCE(on) temperature coefficient to facilitate easy parallel operation.

Applications

  • Uninterruptible Power Supplies (UPS)
  • Switch Mode Power Supplies (SMPS)
  • Induction Heating Systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm compliance with RoHS directives and material categorization standards as defined in Vishay documentation. Ensure proper handling procedures are followed during installation to maintain the integrity of the fully isolated package and prevent electrostatic discharge damage.

Selection Notes

Select this module for applications requiring high efficiency and fast switching speeds up to 30 kHz. The square RBSOA and low internal inductance support robust performance in demanding power conversion environments. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values to ensure reliable operation under varying load conditions.

Part Context

This component belongs to the VS-GT series of insulated gate bipolar transistors manufactured by Vishay Semiconductors. It represents the Generation 2 SOT-227 package design, which maintains industry-standard outlines for compatibility while offering improved electrical characteristics compared to previous iterations.

Replacement Considerations

The datasheet indicates plug-in compatibility with other standard SOT-227 packages. Verify pinout alignment and thermal interface specifications when substituting with alternative single-switch modules from different manufacturers to ensure mechanical and electrical interchangeability.

FAQ

What is the maximum isolation voltage rating?

The module supports an isolation voltage of 2500 V between any terminal and the case for one minute.

How does the device handle short circuit conditions?

It features a Short Circuit Safe Operating Area (SCSOA) capable of withstanding 10 μs at a junction temperature of 150 °C with a collector current limit of 250 A.

What is the typical reverse recovery charge of the integrated diode?

At 25 °C with a forward current of 50 A and dIF/dt of 200 A/μs, the typical reverse recovery charge (Qrr) is 1093 nC.

VS-GT100DA120UFVS-GT100DA120UF
$35.09
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