SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The VS-GT100NA120UX is a high-side chopper IGBT module utilizing Trench IGBT technology and integrated HEXFRED clamping diode. It features a 1200 V collector-emitter voltage rating and supports a continuous collector current of 100 A at 71 °C case temperature. The typical saturation voltage is 2.36 V at 100 A and 25 °C. Designed for switching frequencies between 8 kHz and 30 kHz, the device offers 10 μs short-circuit capability and very low internal inductance (≤ 5 nH typical). It is housed in an industry-standard SOT-227 package with full isolation.
Verify component authenticity by cross-referencing the Vishay document number 93100 and revision date against official manufacturer channels. Confirm that the specific ordering suffix matches the required electrical characteristics and packaging configuration. Ensure compliance with RoHS and material categorization policies as defined in Vishay documentation before finalizing procurement orders.
Select this component for applications requiring high efficiency in power conversion circuits operating within the 8 kHz to 30 kHz range. Consider the thermal resistance values and derating curves when designing heat dissipation systems. Verify that the gate drive voltage and resistor values align with the specified switching loss characteristics to optimize performance and prevent overstress during transient conditions.
This part belongs to Vishay's High Side Chopper IGBT series packaged in the standard SOT-227 outline. It integrates a Trench IGBT switch with a HEXFRED diode, distinguishing it from standard discrete modules. The design focuses on reducing system complexity through low internal inductance and direct mounting capabilities, serving as a drop-in replacement for legacy designs in industrial power electronics.
The datasheet notes plug-in compatibility with other SOT-227 packages. Designers should verify pinout alignment and thermal interface dimensions when substituting with other manufacturers' SOT-227 IGBT modules to ensure mechanical fit and electrical equivalence without PCB layout changes.
The device supports a short-circuit capability of 10 μs under specified test conditions.
Yes, it includes a HEXFRED clamping diode integrated with the Trench IGBT.
The typical internal inductance is ≤ 5 nH.