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Product Detailed Parameters
- Description：MODULES IGBT - IAP IGBT
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Box
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：INT-A-PAK IGBT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：96 A
- Power - Max：259 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GT100TS065N is a half bridge high speed IGBT module utilizing Trench IGBT technology and Gen4 FRED Pt anti-parallel diodes. It features an INT-A-PAK package with Al2O3 DBC, designed for industrial level applications. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, continuous collector current (IC DC) of 72 A at TC = 80 °C, and VCE(on) of 1.82 V at 100 A and 25 °C. The device operates within a junction temperature range of -40 to +175 °C, supports switching speeds from 8 kHz to 30 kHz, and has UL file E78996 approval.
Feature Summary
- Optimized for high current inverter stages using Trench IGBT technology
- Features ultra soft reverse recovery characteristics via Gen4 FRED Pt anti-parallel diodes
- Designed for direct mounting to heatsink with very low junction to case thermal resistance
- Provides low EMI performance suitable for industrial power applications
Applications
- High current inverter stages
- Industrial power inverters
- Motor drives and robotics
- Welding equipment
- Power generation and storage systems
Procurement Notes
Verify the specific ordering suffix 'N' indicates the ultrafast IGBT variant as defined in the official datasheet nomenclature. Confirm that the INT-A-PAK package dimensions match the mechanical drawing provided in document number 97007. Ensure compliance with RoHS standards and material categorization requirements specified by Vishay before finalizing procurement orders.
Selection Notes
Select this component when low switching losses are critical for high-frequency operation between 8 kHz and 30 kHz. The 650 V rating and 72 A continuous current capability suit medium-power industrial applications. Consider the low thermal resistance for efficient heat dissipation without complex cooling structures. Validate gate drive requirements against the specified VGE limits and total gate charge values.
Part Context
This part belongs to Vishay's INT-A-PAK series of half bridge modules. It utilizes Trench IGBT technology combined with Gen4 FRED Pt diodes. The 'N' suffix denotes the ultrafast switching characteristic variant. The module is designed to replace standard industrial packages while offering improved thermal and electrical performance.
Replacement Considerations
Check pinout compatibility if replacing legacy modules. Verify thermal interface material specifications for the INT-A-PAK package. Ensure the replacement maintains the required 650 V blocking voltage and sufficient current handling for the specific application load conditions.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175 °C.
Does the module include an integrated anti-parallel diode?
Yes, it includes a Gen4 FRED Pt technology anti-parallel diode with ultra soft reverse recovery characteristics.
What is the typical turn-off switching energy at 125 °C?
The typical turn-off switching energy (Eoff) at TJ = 125 °C is 1.0 mJ under test conditions of IC = 100 A, VCC = 325 V, and Rg = 22 Ω.
