VS-GT100TS065S

$56.85

Description：MODULES IGBT - IAP IGBT
Series：FRED Pt®

SKU:f8be1abde3a3 Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：MODULES IGBT - IAP IGBT
Series：FRED Pt®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Box
IGBT Type：Trench
Configuration：Half Bridge Inverter
Vce(on) (Max) @ Vge, Ic：1.32V @ 15V, 100A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：INT-A-PAK IGBT
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：247 A
Power - Max：517 W
Current - Collector Cutoff (Max)：100 µA
Input Capacitance (Cies) @ Vce：-

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VS-GT100TS065S

Overview

The VS-GT100TS065S is a half-bridge IGBT power module manufactured by Vishay Semiconductors in the INT-A-PAK package. It utilizes Trench IGBT technology and Gen4 FRED Pt® anti-parallel diodes with ultra-soft reverse recovery characteristics. The device features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC DC) of 199 A at TC = 80 °C. At 25 °C, the typical VCE(on) is 1.05 V at 100 A. The module operates within a junction temperature range of -40 to +175 °C and includes UL approval file E78996.

Feature Summary

Optimized for high-current inverter stages using low conduction loss Trench IGBT technology
Integrated Gen4 FRED Pt® anti-parallel diodes providing ultra-soft reverse recovery characteristics
Designed for direct mounting to heatsinks with very low junction-to-case thermal resistance

Applications

AC TIG welding machines
Power inverters for energy storage systems
Industrial motor drives

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the received part matches document number 97011 and revision 26-May-2025. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components. Cross-reference ordering suffixes against official documentation to confirm specific configuration requirements.

Selection Notes

Select this module for applications requiring high efficiency in high-current inverter stages. The low VCE(on) minimizes conduction losses, while the ultra-soft recovery diode reduces switching noise. Verify that the operating case temperature remains within limits to sustain the rated 199 A continuous current. Ensure gate drive circuits support the specified VGE parameters for optimal switching performance.

Part Context

This component belongs to the VS-GT series of half-bridge IGBT modules from Vishay Semiconductors. It is designed as an industrial-grade solution compatible with standard mechanical footprints. The INT-A-PAK packaging allows for direct heatsink mounting, facilitating efficient thermal management in compact power electronics designs.