VS-GT180DA120U

Overview

The VS-GT180DA120U is a 1200 V trench and field stop Insulated Gate Bipolar Transistor (IGBT) with an integrated antiparallel diode in a SOT-227 package. It supports a continuous collector current of 185 A at 90 °C case temperature and features a typical on-state voltage of 1.55 V at 100 A. The device includes HEXFRED® diodes with ultrasoft reverse recovery characteristics, ensuring low switching losses and reduced electromagnetic interference. Designed for high-efficiency power conversion, it offers a square Reverse Bias Safe Operating Area (RBSOA), a short circuit capability of 10 μs, and very low internal inductance.

Feature Summary

• Utilizes trench and field stop technology to achieve low switching losses and improved operating efficiency.
• Features HEXFRED® antiparallel diodes with ultrasoft reverse recovery to minimize EMI and snubber requirements.
• Provides a square RBSOA and 10 μs short circuit capability for robust operation under fault conditions.
• Incorporates a fully isolated SOT-227 package with very low internal inductance for easy paralleling.

Applications

• Uninterruptible Power Supplies (UPS)
• Switched Mode Power Supplies (SMPS)
• Induction Heating Systems
• Welding Equipment

Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement specifications. Confirm that the ordering suffix matches the required circuit configuration and packaging format. Ensure compliance with material categorization definitions provided by the vendor. Validate technical parameters directly from the source document to avoid discrepancies caused by potential updates or revisions.

Selection Notes

Select this component for applications requiring high current handling and low conduction losses. Consider the thermal resistance values when designing heatsinking solutions for case temperatures up to 90 °C. Evaluate the switching loss characteristics against the target operating frequency range. Ensure gate drive circuits are compatible with the specified threshold voltages and gate charge requirements.

Part Context

This IGBT belongs to Vishay's GT series, which utilizes advanced trench and field stop technologies. The part number indicates a 180 A current rating, single switch with antiparallel diode configuration, SOT-227 package, and 1200 V voltage rating. The 'U' suffix denotes ultrafast performance characteristics suitable for high-frequency power conversion applications.

Replacement Considerations

Direct replacements must match the SOT-227 outline dimensions and electrical ratings. Verify compatibility with existing PCB layouts and mounting torque specifications. Ensure substitute components offer comparable switching speeds and thermal performance characteristics.

FAQ

What is the maximum short circuit duration for the VS-GT180DA120U?

The device has a short circuit safe operating area (SCSOA) capability of 10 μs at TJ = 150 °C.

Does the VS-GT180DA120U include an integrated freewheeling diode?

Yes, it features HEXFRED® antiparallel diodes with ultrasoft reverse recovery characteristics.

What is the typical on-state voltage drop at rated current?

The typical VCE(on) is 1.55 V at IC = 100 A and TJ = 25 °C.