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Product Detailed Parameters
- Description：MODULES IGBT - IAP IGBT
- Series：FRED Pt®
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Box
- IGBT Type：Trench
- Configuration：Half Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.32V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：INT-A-PAK IGBT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：476 A
- Power - Max：1000 W
- Current - Collector Cutoff (Max)：200 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GT200TS065S is a half bridge IGBT module utilizing Trench IGBT technology and Gen4 FRED Pt® anti-parallel diodes. It features an INT-A-PAK package with Al2O3 DBC, designed for industrial applications. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC DC) of 378 A at TC = 80 °C. The typical VCE(on) is 1.09 V at 200 A and 25 °C. Switching characteristics at TJ = 25 °C show Eon of 1.1 mJ and Eoff of 9.7 mJ at IC = 200 A, VCC = 325 V. The junction-to-case thermal resistance (RthJC) is 0.15 °C/W per switch.
Feature Summary
- Optimized for high current inverter stages such as AC TIG welding machines
- Direct mounting capability to heatsink with very low junction to case thermal resistance
- Low electromagnetic interference (EMI) performance
Applications
- High current inverter stages
- AC TIG welding machines
- Industrial power supplies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct technical specifications. Confirm compliance requirements such as RoHS status and material categorization details directly from the datasheet before procurement. Ensure that the intended application environment matches the specified operating temperature ranges and thermal constraints defined by Vishay Semiconductors.
Selection Notes
Select this component based on the required voltage rating of 650 V and current handling capabilities up to 378 A. Consider the switching energy losses and thermal resistance when designing the cooling system. Verify gate drive requirements against the specified VGE and charge parameters to ensure optimal performance and reliability in the target circuit design.
Part Context
This device belongs to the INT-A-PAK series of half bridge IGBT modules from Vishay Semiconductors. It utilizes Trench IGBT technology combined with Gen4 FRED Pt® diodes to achieve low conduction and switching losses. The module is designed for industrial level applications and offers UL approval under file E78996.
Replacement Considerations
Check for alternative part numbers within the same INT-A-PAK family or other Vishay IGBT modules with compatible pinouts and electrical ratings. Ensure any substitute maintains the same circuit configuration and thermal characteristics.
