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The VS-GT300TD60S is a dual INT-A-PAK low profile half bridge IGBT module manufactured by Vishay Semiconductors. It utilizes TrenchStop IGBT technology and Gen4 FRED Pt diices, rated for 600 V collector-emitter voltage and 300 A continuous collector current at 100 °C case temperature. The typical on-state voltage is 1.15 V at 300 A and 25 °C. Operating frequencies range from DC to 1 kHz. The module features an Al2O3 DBC substrate, UL file E78996 approval, and operates within a junction temperature range of -40 °C to 175 °C.
Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the ordering suffix matches the required package variant and compliance standards. Ensure all technical parameters align with the intended application requirements prior to purchase.
Select this component when designing circuits requiring high current handling up to 300 A with low conduction losses. Evaluate the thermal impedance characteristics to ensure adequate heatsinking for the target operating frequency. Verify gate drive requirements match the specified threshold and leakage currents for reliable switching.
This part belongs to Vishay's Dual INT-A-PAK low profile series of half bridge modules. It is engineered specifically for industrial applications demanding high power density and robust thermal management capabilities.
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on electrical ratings without verifying pinout and thermal specifications.
The maximum RMS isolation voltage between any terminal and the case is 3500 V for a duration of 1 second at a junction temperature of 25 °C.
The continuous collector current decreases as the case temperature increases; it is rated at 300 A at 100 °C and 349 A at 80 °C.
At a junction temperature of 125 °C, with IC = 300 A, VCC = 300 V, and Rg = 1.5 Ω, the typical turn-off switching loss is 20 mJ.