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Product Detailed Parameters
- Description：IGBT MOD 1200V 341A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.17V @ 15V, 300A (Typ)
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Double INT-A-PAK (3 + 8)
- Supplier Device Package：Double INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：341 A
- Power - Max：1042 W
- Current - Collector Cutoff (Max)：300 µA
- Input Capacitance (Cies) @ Vce：36 nF @ 30 V
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Overview
The VS-GT300YH120N is a DIAP Trench IGBT power module rated at 1200 V and 300 A. It utilizes trench and field stop technology with a positive temperature coefficient, supporting a maximum junction temperature of 175 °C and offering 10 μs short circuit capability. The package is Dual INT-A-PAK with an isolated copper baseplate using DCB technology. It integrates HEXFRED® antiparallel and series diodes featuring soft reverse recovery. Designed for current fed inverter topology, the module operates within a frequency range of 4 kHz to 30 kHz.
Feature Summary
- Incorporates trench and field stop IGBT technology with a positive temperature coefficient for enhanced short circuit ruggedness.
- Integrates HEXFRED® antiparallel and series diodes characterized by soft reverse recovery properties.
- Features an isolated copper baseplate utilizing Direct Copper Bonding (DCB) technology for thermal management.
Applications
- Current fed inverter topologies
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with material categorization and environmental standards. Confirm that the requested part number matches the exact voltage, current, and package specifications required for the target application before finalizing procurement.
Selection Notes
Select this module for applications requiring high current handling up to 300 A and robust short circuit protection. Ensure the operating frequency falls within the specified 4 kHz to 30 kHz range. Verify thermal management requirements align with the provided thermal impedance characteristics and mounting torque specifications for reliable operation.
Part Context
This component belongs to Vishay's DIAP Trench IGBT Power Module family, designed for high-power switching applications. It represents a specific configuration within the VS-GT series, distinguished by its 300 A current rating and Dual INT-A-PAK packaging, tailored for efficient thermal dissipation and electrical isolation in demanding industrial environments.
Replacement Considerations
Consult Vishay's official cross-reference documentation or contact technical support for verified substitute part numbers. Do not assume compatibility based on generic parameters; verify all electrical ratings, pin configurations, and thermal characteristics against the original datasheet.
FAQ
What is the maximum junction temperature for the VS-GT300YH120N?
The maximum junction temperature is 175 °C.
Does the module include integrated freewheeling diodes?
Yes, it includes both HEXFRED® antiparallel and series diodes with soft reverse recovery characteristics.
What is the recommended short circuit withstand time?
The module supports a short circuit capability of 10 μs.
