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The VS-GT400TD60S is a dual INT-A-PAK low profile half bridge IGBT module manufactured by Vishay Semiconductors. It utilizes TrenchStop IGBT technology and Gen 4 FRED Pt diices for optimized hard switching performance. The device features a 600 V collector-emitter voltage rating (VCES) and supports a continuous collector current of 400 A at a case temperature of 114 °C. Typical on-state voltage (VCE(on)) is 1.14 V at 400 A and 25 °C. The module incorporates an Al2O3 Direct Bonded Copper substrate, providing very low junction-to-case thermal resistance and enabling direct mounting on heatsinks.
Verify the specific ordering suffix against official Vishay documentation to ensure correct technical specifications. Confirm compliance requirements such as UL approval file E78996 and material categorization standards before finalizing procurement. Ensure that the requested quantity aligns with manufacturer packaging configurations.
Select this component for applications requiring high current density and robust reverse bias safe operating area characteristics. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance values. Ensure gate drive circuits support the recommended ±20 V gate-emitter voltage limits for reliable operation.
This part belongs to Vishay's Dual INT-A-PAK Low Profile series of IGBT modules. The naming convention indicates a 400 A current rating, half-bridge configuration, and 600 V voltage class. It is designed to provide compact solutions for industrial power electronics where space constraints and thermal performance are critical design factors.
Consult official Vishay cross-reference documents for verified substitute part numbers. Do not assume functional compatibility with other manufacturers' packages without verifying pinout and thermal interface dimensions.