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Product Detailed Parameters
- Description：IGBT MOD 1200V 600A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Double INT-A-PAK (3 + 8)
- Supplier Device Package：Double INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：2119 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：28.8 nF @ 25 V
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Overview
The VS-GT400TH120N is a 1200 V, 400 A half-bridge IGBT power module in a Double INT-A-PAK package. It utilizes low VCE(on) trench technology with a typical saturation voltage of 1.70 V at 400 A and 25 °C. The device supports switching frequencies from 8 kHz to 30 kHz and features a 10 μs short circuit capability. Maximum junction temperature is rated at 150 °C, with a maximum power dissipation of 2119 W. The module incorporates an isolated copper baseplate using DCB technology and includes a fast, soft reverse recovery antiparallel FWD.
Feature Summary
- Low conduction losses achieved through trench IGBT technology
- Short circuit ruggedness with 10 μs withstand time
- Positive temperature coefficient for VCE(on)
- Fast and soft reverse recovery antiparallel freewheeling diode
Applications
- Uninterruptible Power Supplies (UPS)
- Inverters for motor drive
- AC and DC servo drive amplifiers
Procurement Notes
Verify the specific datasheet revision and document number against official Vishay sources before finalizing specifications. Confirm that the Double INT-A-PAK package dimensions and mounting torque requirements align with the mechanical design constraints of the target application.
Selection Notes
Select this component for high-power inverter applications requiring robust short-circuit protection and low switching losses. Ensure thermal management systems can handle the specified junction-to-case thermal resistance values. Validate gate drive parameters against the recommended ±15 V operating range and internal gate resistance characteristics.
Part Context
This part belongs to Vishay's IGBT power module lineup designed for general inverters and UPS systems. It combines high current handling with ultralow conduction loss and short circuit ruggedness. The module integrates both the IGBT switch and the antiparallel diode in a single compact package.
Replacement Considerations
Check for updated revisions within the same product family. Verify pinout compatibility and thermal interface requirements when considering alternative manufacturers or newer generations of IGBT modules.
FAQ
What is the short circuit withstand time for the VS-GT400TH120N?
The module has a short circuit withstand time of 10 μs at TJ = 125 °C.
What is the maximum junction temperature rating?
The maximum operating junction temperature is 150 °C.
Does the module include an integrated freewheeling diode?
Yes, it features a fast and soft reverse recovery antiparallel FWD.
