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The VS-GT55NA120UX is a high-side chopper IGBT module in the SOT-227 package, manufactured by Vishay Semiconductors. It features Trench IGBT technology and an integrated HEXFRED clamping diode. The device supports a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC DC) of 50 A at 73 °C case temperature. At 25 °C, the continuous collector current reaches 68 A. The typical on-state voltage (VCE(on)) is 2.39 V at 50 A and 25 °C. The module operates within a junction temperature range of -40 °C to 150 °C and provides 2500 V RMS isolation between any terminal and the case.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with material categorization requirements. Ensure that the requested revision matches the latest datasheet version to avoid discrepancies in electrical parameters or mechanical dimensions during procurement.
Select this component based on the required 1200 V blocking capability and the necessary continuous current rating relative to the operating case temperature. Consider the thermal impedance characteristics and the need for snubbing circuits when designing for high-frequency switching applications up to 60 kHz.
This module belongs to the SOT-227 Generation 2 family of power modules from Vishay Semiconductors. It is designed as a plug-in compatible replacement for other devices utilizing the industry-standard SOT-227 outline, facilitating easy assembly and parallel operation in high-power conversion circuits.
Direct substitutes include other Vishay SOT-227 IGBT modules with similar voltage and current ratings, such as the VS-GT80DA60U, provided the circuit configuration and thermal requirements are compatible.
The maximum clamped inductive load current (ILM) is 250 A.
No, the datasheet specifies a full-square RBSOA at TJ = 150 °C with IC = 250 A and VCC = 700 V.
The typical gate threshold voltage is 5.8 V, with a maximum of 7.6 V.