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The VS-GT90DA60U is a High Speed Trench IGBT module from Vishay Semiconductors, rated for 600 V and 90 A continuous collector current at 92 °C. It integrates an ultrasoft reverse recovery HEXFRED anti-parallel diode and operates within a junction temperature range of -40 °C to 150 °C. The device features a fully isolated SOT-227 package with very low internal inductance (≤ 5 nH typical) and UL approval E78996. Electrical characteristics include a maximum collector-emitter saturation voltage of 2.15 V at 100 A and a gate threshold voltage ranging from 2.9 V to 5.3 V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with material categorization definitions and RoHS directives. Confirm that the component matches the required circuit configuration code 'D' for a single switch with an antiparallel diode before finalizing procurement orders.
Select this component for applications requiring high operating efficiency and low electromagnetic interference due to its ultrasoft diode recovery. Ensure the thermal design accommodates the specified junction-to-case thermal resistance values. Validate that the switching frequency requirements fall within the recommended 8 kHz to 30 kHz operational range for optimal performance.
This part belongs to the VS-GT series of insulated gate bipolar transistors manufactured by Vishay Semiconductors. It utilizes Generation 2 SOT-227 packaging, which provides standardized dimensions for industrial power modules. The product line focuses on high-speed trench technology designed to reduce conduction and switching losses in medium-power conversion circuits.
The datasheet specifies that the SOT-227 package is industry standard and plug-in compatible with other packages of the same type. No specific substitute part numbers are documented in the provided source material.