VS-HFA04SD60SL-M3

Single Diodes Overview

The VS-HFA04SD60SL-M3 is a HEXFRED ultrafast soft recovery diode from Vishay Semiconductors, rated for 600 V reverse voltage and 4 A average forward current. It utilizes a DPAK (TO-252AA) surface-mount package with an isolated thermal pad. The device features a typical reverse recovery time of 17 ns at 25 °C and a maximum junction temperature of 150 °C. Designed for high-frequency power conditioning, it guarantees avalanche capability and meets MSL level 1 per J-STD-020.

Single Diodes Feature Summary

• Ultrafast recovery time with ultrasoft characteristics to minimize switching losses
• Very low peak reverse recovery current and stored charge
• Guaranteed avalanche capability for robust operation
• Eliminates the need for snubber circuits in most applications

Single Diodes Applications

• Freewheeling diodes in motor drives
• Flyback converters
• High frequency power conditioning systems
• General purpose power converters

Single Diodes Procurement Notes

Verify the specific ordering suffix 'L' corresponds to the left-oriented tape and reel packaging configuration as defined in the manufacturer's ordering information table. Confirm that the component meets RoHS compliance and lead-free termination requirements by checking the '-M3' designation against current environmental standards before finalizing procurement orders.

Single Diodes Selection Notes

Select this component when designing circuits requiring reduced RFI and EMI through soft recovery characteristics. Ensure the application operates within the specified 4 A continuous forward current limit at a case temperature of 100 °C. Verify that the system can accommodate the 600 V blocking voltage rating and that the thermal management design supports the specified junction-to-case thermal resistance.

Single Diodes Part Context

This part belongs to the HEXFRED family of ultrafast soft recovery diodes manufactured by Vishay General Semiconductor - Diodes Division. The product line focuses on reducing power loss in both the diode and the switching transistor. The specific model utilizes silicon technology optimized for high-speed switching applications where minimizing reverse recovery effects is critical for overall system efficiency.

Single Diodes Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.