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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.1A VMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：3.8Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Power - Max：120mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：VMT6
- Grade：-
- Qualification：-
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Overview
The VT6J1T2CR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in a VMT6 surface-mount package. It features a drain-source breakdown voltage of 20V and a continuous drain current of 100mA. The device exhibits a maximum on-resistance of 3.8 Ohms at 100mA with a 4.5V gate drive. Operating characteristics include a threshold voltage of 1V and a gate charge of 1.4nC. Power dissipation is rated at 120mW, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration integrated into a compact VMT6 package for space-constrained designs.
- Optimized for low-voltage operation with a 1.2V drive capability suitable for modern logic interfaces.
- Enhancement mode technology ensures reliable switching performance within specified thermal limits.
Applications
- Low-voltage signal switching circuits
- Battery protection modules
- Portable electronic device power management
Procurement Notes
This component has been officially designated as Last Time Buy or Obsolete by the manufacturer. Procurement should focus on verifying final availability through authorized distributors before committing to production schedules. Engineers must initiate immediate design-in activities for replacement parts to mitigate supply chain risks associated with end-of-life semiconductor components.
Selection Notes
Designers requiring a dual P-channel MOSFET in a VMT6 package should evaluate this part for 20V applications. Key selection criteria include the 3.8 Ohm on-resistance and 100mA current limit. Due to the obsolete status, alternative sourcing is restricted. Verify that the 1.2V drive requirement aligns with the system's control logic levels and that the thermal dissipation capacity meets the application's duty cycle demands.
Part Context
The VT6J1T2CR belongs to ROHM’s series of small-signal MOSFETs designed for portable electronics. It provides a dual P-channel solution in a miniature footprint, targeting applications where board space is limited. The component represents a specific generation of low-voltage switching devices intended for battery-powered systems requiring efficient signal control.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The datasheet indicates the product is discontinued. Users must consult official ROHM channels for valid cross-reference recommendations or select new components based on updated electrical specifications.
