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The VT6T2T2R is a dual PNP digital transistor array manufactured by ROHM Semiconductor, housed in a VMT6 surface-mount package. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA per element. The device operates with a transition frequency (fT) of 300MHz and has a maximum power dissipation (Pd) of 150mW. DC current gain (hFE) is specified at a minimum of 120 at IC=1mA and VCE=6V. The component supports a junction temperature up to +150°C and is supplied in tape-and-reel packaging.
Verify the RoHS compliance status and specific ordering suffixes directly with authorized distributors or the manufacturer before procurement. Confirm that the VMT6 package dimensions align with your PCB footprint requirements. Ensure that the supply status is checked as this part may have limited availability depending on the production cycle. Always refer to the latest datasheet for handling and storage guidelines.
Select the VT6T2T2R when a dual PNP solution is required within a small SOT-563 equivalent package. Consider its 50V rating and 100mA current capacity against load requirements. Evaluate the 150mW power dissipation limit for thermal management in dense layouts. Compare hFE characteristics with alternative arrays if precise gain matching is critical for the application.
This component belongs to ROHM's digital transistor series, which integrates transistors with built-in resistors to reduce board space and assembly costs. The VMT6 package is a standard small-outline type designed for high-density surface mount technology applications. This series is widely used in consumer electronics and industrial control systems where reliable switching is needed.
The EMX52 is listed as a similar specification replacement with comparable NPN+NPN polarity and 50V rating. Verify pinout compatibility and electrical parameters such as hFE and VCEO before substitution. Note that polarity differences may require circuit redesign if direct pin-to-pin replacement is not feasible.