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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 50V 100MA VMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：150mW
- Frequency - Transition：350MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD
- Supplier Device Package：VMT6
- Grade：-
- Qualification：-
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Overview
The VT6X2T2R is a complex transistor comprising two NPN bipolar junction transistors in a single SOT-563 package. It features a collector-emitter voltage (Vceo1) of 50.0 V and a continuous collector current (Ic) of 0.1 A. The DC current gain (hFE) ranges from 120 to 560. Designed for surface mount applications, it operates within a storage temperature range of -55°C to 150°C. The component is supplied in tape and reel packaging with a unit quantity of 8000.
Feature Summary
- Integrates dual NPN transistors into a compact footprint
- Provides high current gain for signal amplification
- Supports surface mount technology for automated assembly
Applications
- General purpose switching circuits
- Signal amplification stages
- Driver circuits for low-power loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and polarity configuration. Confirm that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Check for any end-of-life notices or last-time-buy statuses associated with this specific part number before finalizing orders.
Selection Notes
Select this component when a dual NPN configuration is required in a minimal surface-mount footprint. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Verify that the required current gain falls within the 120 to 560 range. Consider thermal management requirements given the small package size and power dissipation limits.
Part Context
This part belongs to ROHM Semiconductor's complex transistor portfolio, designed to replace discrete dual-transistor solutions. It simplifies PCB layout by integrating two matched NPN devices. The SOT-563 package offers a balance between component count reduction and electrical performance for consumer and industrial electronics.
Replacement Considerations
The EMX52T2R is listed as a similar specification replacement. Both parts share the same NPN+NPN polarity, 50 V Vceo, and 0.1 A Ic ratings. Verify pinout compatibility and hFE binning differences before substitution.
