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Product Detailed Parameters
- Description：MOSFET 6N-CH 100V 210A V2-PAK
- Series：-
- Mfr：IXYS
- Package：Box
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：210A
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：V2-PAK
- Supplier Device Package：V2-PAK
- Grade：-
- Qualification：-
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Overview
The VWM200-01P is a three-phase full bridge power module utilizing IXYS Trench MOSFET technology. It integrates six N-channel MOSFETs with optimized intrinsic reverse diodes within a single package. The device features a maximum drain-source voltage (VDSS) of 100 V and a continuous drain current (ID25 at TC=25°C) of 210 A. The typical on-state resistance (RDSon) is 3.6 mΩ, with a maximum of 5.2 mΩ at 100 A and 10 V gate drive. Total gate charge (Qg) is 430 nC. Thermal performance includes a junction-to-case thermal resistance (RthJC) of 0.26 K/W. The module operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Integrates three-phase full bridge configuration using Trench MOSFET technology for low on-resistance and optimized intrinsic reverse diode characteristics.
- Features an isolated DCB ceramic base plate with solder terminals designed for PCB mounting and optimized heat transfer efficiency.
- Provides high integration level within a robust package suitable for demanding automotive and industrial environments.
Applications
- Automotive electric power steering systems
- Industrial vehicle propulsion drives
- Battery supplied equipment
Procurement Notes
Verify component authenticity through authorized IXYS distributors or verified supply chain channels. Confirm the specific revision status as the datasheet indicates a phase-out notice. Ensure compatibility with existing thermal interface materials given the specified RthJC values. Validate that the TO-268 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this module for applications requiring high current handling in a compact three-phase topology. Consider the 100 V rating and 210 A current capacity against system load profiles. Evaluate the thermal management solution based on the 0.26 K/W junction-to-case resistance. Verify gate drive requirements align with the 430 nC total gate charge specification for optimal switching performance.
Part Context
The VWM200-01P belongs to the VWM series of advanced power modules from IXYS. This series utilizes Trench MOSFET technology to achieve superior conduction and switching characteristics compared to planar devices. The module is designed specifically for high-power density applications where efficient thermal dissipation and reliable operation under varying temperatures are critical.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. As the component is marked as phase-out, alternative sourcing should focus on verifying stock availability or consulting manufacturer recommendations for legacy replacements.
