WAS110M12BM2

Overview

The WAS110M12BM2 is a 1200 V Silicon Carbide (SiC) half-bridge power module from Wolfspeed, utilizing the BM2 series architecture. It features an industry-standard 62 mm footprint and provides a continuous drain current rating of 110 A with a maximum on-resistance of 12.5 mΩ at 25°C. The device is qualified for industrial applications and high humidity operation (HV-H3TRB). Designed for ultra-low loss and high-frequency switching, it supports chassis mounting and operates within a junction temperature range up to 150°C.

Feature Summary

• Industry-standard 62 mm form factor for simplified mechanical integration
• High humidity resistance qualification ensuring reliability in harsh environments
• Ultra-low conduction and switching losses enabling high-frequency operation

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters
• Induction heating systems

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or certified partners. Confirm that the specific batch matches the datasheet specifications regarding thermal characteristics and electrical parameters. Ensure proper handling procedures are followed due to the sensitivity of silicon carbide devices. Check for any recent product change notifications that may affect performance or compliance status before finalizing procurement decisions.

Selection Notes

Select this module when system design requires a compact 62 mm footprint combined with robust industrial-grade reliability. The BM2 configuration offers a balanced trade-off between current capacity and on-resistance for mid-power applications. Consider the HV-H3TRB qualification if the operating environment involves significant humidity exposure. Evaluate thermal management requirements based on the 12.5 mΩ on-resistance to ensure efficient heat dissipation during high-frequency switching cycles.

Part Context

The WAS110M12BM2 belongs to the BM2 family of SiC power modules, representing Wolfspeed's second-generation packaging technology. This series emphasizes standardization across different current ratings while maintaining high performance. The module integrates two N-channel MOSFETs in a half-bridge configuration, providing a complete switching leg solution. It is designed to replace older discrete solutions or first-generation modules, offering improved thermal performance and reduced parasitic inductance.

Replacement Considerations

For direct pin-compatible replacements within the same voltage and current class, consider the CAS110M12BM2. Note that the CAS variant may have different qualification levels or minor parameter variations. Always verify thermal interface requirements and gate drive compatibility when substituting components to ensure system stability.