WAS350M12BM3

Overview

The WAS350M12BM3 is a silicon carbide half-bridge module rated for 1200 V and 350 A. It features an industry-standard 62 mm footprint with a copper baseplate and aluminum nitride insulator. Key electrical parameters include a maximum drain-source voltage of 1200 V, a continuous drain current of 424 A at 25 °C case temperature, and a typical on-state resistance of 5.2 mΩ at 150 °C. The module supports a recommended gate-source voltage of -4 V to +15 V and operates within a junction temperature range of -40 °C to 175 °C.

Feature Summary

• Industry standard 62 mm footprint enables system retrofitting
• High humidity operation capability verified by THB-80 testing
• Ultra-low loss performance supporting high-frequency operation
• Zero reverse recovery from diodes and zero turn-off tail current from MOSFETs

Applications

• Induction heating systems
• Motor drives
• Renewables energy converters
• Railway auxiliary and traction power supplies
• EV fast charging stations

Procurement Notes

Verify the specific ordering suffix when purchasing. The WAS350M12BM3 designation indicates the module without pre-applied phase change thermal interface material. The WAS350M12BM3T variant includes this material. Confirm the exact part number matches the thermal management requirements of the target design before procurement.

Selection Notes

Select the WAS350M12BM3 for applications requiring a 1200 V, 350 A SiC half-bridge in a compact form factor. Ensure the cooling solution maintains the case temperature within limits to support the specified continuous drain current. Verify that the gate drive circuitry provides the recommended -4 V to +15 V swing for optimal switching performance.

Part Context

This component belongs to the BM3 series of Wolfspeed silicon carbide modules. It utilizes a copper baseplate and aluminum nitride insulator for thermal management. The module is designed for industrial and harsh environment applications, offering high reliability and efficiency compared to traditional silicon devices.

Replacement Considerations

Direct replacements must match the 62 mm footprint, 1200 V rating, and half-bridge configuration. Evaluate thermal resistance and pinout compatibility. Consider the WAS350M12BM3T if pre-applied thermal interface material is required for the assembly process.

FAQ

What is the difference between WAS350M12BM3 and WAS350M12BM3T?

The WAS350M12BM3T includes pre-applied phase change thermal interface material, whereas the WAS350M12BM3 does not.

What is the maximum transient gate-source voltage allowed?

The maximum transient gate-source voltage is +23 V and -10 V.

Does this module exhibit reverse recovery energy?

SiC Schottky diodes do not have reverse recovery energy, but they still contribute capacitive energy during switching transitions.