Single Diodes WNSC6D10650B6J product image

WNSC6D10650B6J

$1.05
  • Description:DIODE SIL CARBIDE 650V 10A D2PAK
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tape & Reel (TR)

SKU:62d9e2cc2783 Category: Brand:

  
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WNSC6D10650B6J is listed in the Single Diodes range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE SIL CARBIDE 650V 10A D2PAK. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for WNSC6D10650B6J

  • Description:DIODE SIL CARBIDE 650V 10A D2PAK
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tape & Reel (TR)
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:1.45 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 650 V
  • Capacitance @ Vr, F:500pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for WNSC6D10650B6J

WNSC6D10650B6J

Single Diodes Overview

The WeEn Semiconductors WNSC6D10650B6J is a single-configuration Silicon Carbide Schottky diode housed in a DPAK-2 (TO-252-2) surface-mount package. It features a maximum repetitive reverse voltage of 650 V and a typical forward current rating of 10 A. The device exhibits a typical forward voltage of 1.29 V at the rated current, with a maximum forward surge current capability of 80 A. Reverse leakage current is specified at 1 μA. The component operates within a junction temperature range from -55 °C to +175 °C and is supplied in a reel packaging format.

Single Diodes Feature Summary

  • Utilizes silicon carbide material for high-frequency switched-mode power supply applications
  • Features low forward voltage drop characteristics inherent to Schottky technology
  • Designed for robust operation at elevated junction temperatures up to 175 °C

Single Diodes Applications

  • High frequency switched-mode power supplies
  • Uninterruptible power systems
  • Inverter circuits

Single Diodes Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and marking standards. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into assembly processes. Ensure the selected variant matches the required thermal management specifications for the target application environment.

Single Diodes Selection Notes

Select this component when a compact surface-mount solution is required for 650 V SiC rectification. The TO-252-2 package offers a balance between current handling capacity and board space efficiency. Consider the thermal resistance characteristics of the DPAK-2 footprint during PCB layout design to ensure reliable operation under continuous load conditions.

Single Diodes Part Context

This part belongs to the WNSC series of silicon carbide Schottky diodes manufactured by WeEn Semiconductors. The series is engineered specifically for high-efficiency power conversion topologies. The product line emphasizes improved switching performance and reduced conduction losses compared to traditional silicon alternatives, supporting modern energy-efficient power electronics designs.

Single Diodes Replacement Considerations

Cross-reference pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the same 650 V blocking voltage and 10 A current ratings. Ensure the replacement package maintains equivalent mounting dimensions for existing PCB footprints.

WNSC6D10650B6JWNSC6D10650B6J
$1.05
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