WP2806045UH

Overview

The WP2806045UH is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. It operates with a drain voltage of 28V and supports frequencies up to 6GHz. At 4.7GHz, the device delivers a typical saturated output power (PSAT) of 57W with a small signal gain of 11dB. The component achieves a pulsed drain efficiency of 45.6% at PSAT under specific test conditions (VDD=28V, IDQ=410mA, 100μs pulse width). It features a robust 160V breakdown voltage and handles a maximum forward gate current of 30mA.

Feature Summary

• Utilizes unmatched GaN HEMT technology for high linearity and power density
• Supports broadband operation across DC to 6GHz frequency range
• Provides high output power capability suitable for demanding RF environments
• Features high output mismatch stress tolerance withstanding 10:1 VSWR

Applications

• Broadband amplifiers
• Cellular infrastructure systems
• Test instrumentation equipment
• WiMAX, LTE, WCDMA, and GSM base stations
• Radar application systems

Procurement Notes

Verify the package suffix when ordering; 'H' denotes through-hole mounting while 'S' indicates surface mount configuration. Confirm that the required output power aligns with the device's 45W nominal rating versus its 57W typical saturated performance. Ensure thermal management solutions support the specified operating junction temperature of 225°C. Validate that the design accommodates the 28V drain supply requirement and appropriate gate biasing voltages.

Selection Notes

Select this component for designs requiring high power density in the sub-6GHz spectrum. The unmatched nature allows flexible impedance matching network design. Consider the 580BH or 580BS package based on assembly constraints. Evaluate thermal resistance requirements carefully due to the high power dissipation at saturation. Ensure the application can handle the 160V drain-source breakdown capability for robustness against transients.

Part Context

This part belongs to the WAVEPIA GaN HEMT family, specifically engineered for wireless communication infrastructure. The naming convention indicates a 28V drain voltage, DC-6GHz bandwidth, and 45W power class. It serves as a core active element in power amplifier stages where efficiency and linearity are critical for modern cellular standards like LTE and WCDMA.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult WAVEPIA technical support for direct replacements or pin-compatible alternatives within their portfolio.