WS1A3940-V1-R3K

Overview

The WS1A3940-V1-R3K is an Asymmetric Doherty Power Amplifier Module (PAM) designed for high-performance RF applications. It integrates Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistors with advanced matching and biasing networks on a multilayer substrate. The module operates within the 3700 MHz to 3980 MHz frequency range, delivering an average output power of 10W at a drain voltage of 48V. Typical gain is specified at 11.7dB, supporting supply voltages up to 50V.

Feature Summary

• Integrates GaN-on-SiC HEMT transistors with advanced matching and biasing networks
• Utilizes Asymmetric Doherty architecture for enhanced efficiency
• Designed for operation in the 3.7GHz to 3.98GHz band

Applications

• SATCOM Ground Terminals
• Multi-standard Cellular Power Amplifiers
• High-performance RF systems requiring integrated PA modules

Procurement Notes

Verify the specific ordering suffix and revision level against the manufacturer's current datasheet to ensure compatibility with system requirements. Confirm that the integrated module meets all necessary regulatory compliance standards for the intended deployment region. Cross-reference part numbers with official Microchip/MACOM catalogs to avoid counterfeit components.

Selection Notes

Select this module when asymmetric Doherty topology is required for improved power efficiency in the 3.7-3.98GHz range. Ensure the design supports the specified 48V to 50V drain voltage and accommodates the thermal management needs of GaN-on-SiC technology. Verify that the integrated nature of the PAM aligns with the PCB layout constraints and impedance matching requirements of the host system.

Part Context

The WS1A3940 series represents MACOM's integration of GaN-on-SiC technology into compact power amplifier modules. This component belongs to a family of asymmetric Doherty PAMs designed to simplify RF front-end designs by combining transistors, matching networks, and bias circuits into a single package, reducing board space and assembly complexity compared to discrete solutions.

Replacement Considerations

The WS1A2639-V1-R3K is a related Asymmetric Doherty Power Amplifier Module from the same manufacturer utilizing similar GaN-on-SiC technology. However, it operates in a different frequency band. Direct substitution requires verification of frequency coverage and system impedance matching.