WSGPA01-V1-R1

Overview

The WSGPA01-V1-R1 is a GaN on SiC discrete general-purpose amplifier designed for applications up to 5 GHz. It operates from DC to 5 GHz, providing a small signal gain of 16.3 dB with a drain efficiency of 42% at 5 GHz. The device delivers an output power of 40 dBm (10 Watts) and requires a 48V supply voltage. It serves as a recommended PA driver for the WS1A3940 final stage in multi-standard cellular power amplifier architectures.

Feature Summary

• Utilizes GaN on SiC process technology for high-power performance
• Designed as a discrete general-purpose amplifier for broadband operation
• Optimized for use as a driver stage in cellular power amplifier systems

Applications

• Multi-standard cellular power amplifier driver stages
• Broadband RF amplification up to 5 GHz
• General-purpose high-power amplifier applications

Procurement Notes

Verify that the specific suffix -R1 corresponds to the required reel packaging configuration if tape-and-reel delivery is mandatory for automated assembly processes. Confirm that the 48V operating voltage aligns with the system power supply design. Ensure thermal management solutions are adequate for the 10W output power dissipation characteristics defined in the official datasheet.

Selection Notes

Select this component when a high-efficiency GaN driver is required for cellular base station or infrastructure applications operating below 5 GHz. The 16.3 dB gain and 40 dBm output power make it suitable for driving final stage power amplifiers. Consider the 48V supply requirement during system power architecture planning.

Part Context

MACOM Technology Solutions specializes in RF, microwave, and photonic semiconductors. The WSGPA01 series represents their discrete GaN on SiC portfolio, targeting high-power density applications. This part is distinct from integrated MMIC amplifiers, offering discrete flexibility for custom PA designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.