WST4200D-GP4

Overview

The WST4200D-GP4 is a GaN-on-SiC RF power transistor die manufactured by MACOM Technology Solutions. It operates from DC to 6 GHz with a breakdown voltage of 84 V and continuous drain current of 3 A. The device features an on-resistance of 220 mOhms and supports gate-source voltages between -10 V and +2 V, with a threshold voltage of -2 V. Designed for high efficiency and gain, it functions within a temperature range of -40°C to +85°C.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide technology for superior RF performance
• Supports high-power amplification with industry-leading gain and efficiency
• Engineered for robust operation in demanding RF environments

Applications

• Cellular infrastructure base stations
• Broadband RF amplifiers
• Test and measurement instrumentation
• Private radio systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the die-level form factor aligns with your substrate and packaging requirements. Ensure thermal management solutions meet the specified operating temperature limits. Validate compatibility with standard GaN biasing protocols.

Selection Notes

Select this component for applications requiring high power density and wide bandwidth up to 6 GHz. Consider the 84 V breakdown voltage for high-voltage swing requirements. Evaluate the 220 mOhm on-resistance for conduction loss optimization. Ensure the single-channel configuration fits the circuit topology.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC transistors designed for next-generation RF power applications. These devices are characterized by high efficiency and compact footprints compared to previous generations. They are engineered to support high power, gain, and reliability in modern communication systems.

Replacement Considerations

Consult MACOM technical documentation for verified equivalent or substitute part numbers. Cross-reference specifications such as breakdown voltage, frequency range, and package compatibility when evaluating alternatives.

FAQ

What is the maximum operating frequency of the WST4200D-GP4?

The device is rated for operation from DC up to 6 GHz.

Is the WST4200D-GP4 pass-biased?

Yes, the transistor is 100% pass-biased and passes JEDEC HAST testing.

What substrate material is used for this transistor?

The WST4200D-GP4 utilizes Gallium Nitride (GaN) on Silicon Carbide (SiC) technology.