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The XGB8206ATI is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It is housed in a D2PAK surface-mount package and features a continuous collector current rating of 20A with a maximum collector-emitter voltage of 350V. The device supports high-voltage operation, with verified gate-emitter withstand voltages up to 3000V under specific test conditions. This component is designed for robust power switching applications requiring reliable performance in compact form factors.
Verify the obsolete status indicated by TENYU ELEC against official Littelfuse channels before procurement. Confirm that the D2PAK package matches design requirements. Ensure the 350V rating aligns with system voltage constraints. Request updated availability data directly from Littelfuse Inc. as distributor stock levels may be inaccurate.
Select this IGBT for applications requiring 20A continuous current handling in a D2PAK footprint. The 350V rating suits medium-voltage power conversion tasks. Verify thermal management capabilities for the package type. Consider the obsolete status when planning long-term production runs or redesigning circuits for future supply chain stability.
The XGB8206ATI belongs to Littelfuse's discrete semiconductor portfolio, specifically within their power control and sensing solutions. It complements other circuit protection devices like fuses and relays offered by the manufacturer. As an IGBT, it serves as a critical switching element in power electronics, distinct from Littelfuse's fuse and sensor product lines.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status reported by distributors, alternative components must be identified through Littelfuse's official replacement guide or engineering support channels.