XN0187200L

Overview

The XN01872 is a silicon n-channel enhancement MOSFET composite transistor designed for switching applications. It integrates two source-coupled FETs into a single EIAJ SC-74A Mini5-G1 package, effectively halving the required mounting area and assembly costs compared to discrete components. The device features a drain-source voltage rating of 50 V and a continuous drain current of 100 mA. Key electrical characteristics include a gate threshold voltage ranging from 1.5 V to 3.5 V and a typical forward transfer admittance of 30 mS at 25°C. The component operates within an ambient temperature range of -55°C to +150°C storage and up to 125°C operation, with a channel temperature limit of 150°C.

Feature Summary

• Integrates two source-coupled FETs into one package to reduce mounting area and assembly costs by half
• Utilizes EIAJ SC-74A Mini5-G1 surface-mount packaging for compact circuit board layouts
• Designed specifically for general-purpose switching applications in standard electronic equipment

Applications

• General electronic equipment such as office machines and household appliances
• Communications equipment signal processing circuits
• Measuring instruments requiring low-power switching elements

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates this product falls under maintenance or discontinued categories. Confirm that the final specifications align with current requirements, as Panasonic reserves the right to modify product standards without notice. Ensure compliance with export control laws if transferring technical data across borders.

Selection Notes

Select this component when space constraints require integrating multiple switching elements into a single footprint. The 50V rating and 100mA current capacity suit low-voltage logic interfaces. Verify that the 1.5V to 3.5V gate threshold voltage matches the driving logic levels of the target application to ensure reliable turn-on and turn-off performance.

Part Context

This part corresponds to the conventional designation 2SK0621 (or 2SK621). It represents a dual-element configuration where two identical n-channel enhancement mode MOSFETs are packaged together. This integration simplifies circuit design by reducing the number of individual components needed for parallel or complementary switching tasks.

Replacement Considerations

The datasheet explicitly identifies the conventional part number 2SK0621 (2SK621) as the equivalent designation. No other substitute part numbers are documented in the provided source material.

FAQ

What is the internal connection configuration of the XN01872?

The device incorporates two separate n-channel enhancement MOSFETs within a single package. Pin 1 and Pin 2 serve as the drains for FET1 and FET2 respectively, while Pin 4 acts as the common source.

What are the absolute maximum ratings for the gate-source voltage?

The maximum gate-source voltage (VGSO) with the drain open is rated at 8 V. Exceeding this limit may damage the device.

How does the XN01872 achieve cost reduction compared to discrete solutions?

By incorporating two elements into one package, the component reduces the required mounting area on the printed circuit board and halves the assembly costs associated with placing individual discrete transistors.