XP0487800L

Overview

The XP04878 is a composite transistor consisting of two silicon N-channel MOSFETs in an S-Mini type 6-pin package. It supports 2.5 V drive and incorporates a built-in gate protection diode. The device features a drain-source breakdown voltage (V_DSS) of 50 V, a continuous drain current (I_D) of 100 mA, and a peak drain current (I_DP) of 200 mA. Total power dissipation is rated at 150 mW. Electrical characteristics include a gate threshold voltage (V_th) maximum of 1.5 V at 1 µA, and a drain-source ON resistance (R_DS(on)) maximum of 12 Ω at V_GS = 4.0 V and I_D = 10 mA.

Feature Summary

• Dual N-channel configuration within a compact S-Mini 6-pin package to reduce mounting area and assembly costs.
• Capable of operation with a low 2.5 V drive voltage for logic-level applications.
• Integrated gate protection diode included within the internal circuit structure.

Applications

• Standard office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Procurement Notes

Verify component status as the product is listed under maintenance or discontinued categories by Panasonic. Confirm availability through authorized distributors or official channels before design finalization. Ensure compliance with RoHS Directive requirements during procurement. Request the latest Product Standards documentation directly from the manufacturer to validate current specifications prior to purchasing.

Selection Notes

Select this component for low-voltage switching applications requiring dual N-channel isolation in a minimal footprint. Verify that the required drain current does not exceed 100 mA continuous or 200 mA peak limits. Ensure the operating environment remains within the specified channel temperature range of up to 150 °C. Confirm compatibility with 2.5 V logic levels for adequate gate threshold performance.

Part Context

This part belongs to the XP series of composite transistors manufactured by Panasonic Electronic Components. It serves as a dual N-channel MOSFET solution designed for general-purpose electronic circuits. The device replaces discrete single-transistor implementations, offering space savings in standard consumer and industrial electronics where low-voltage switching is necessary.

Replacement Considerations

The datasheet identifies the internal structure as equivalent to two 2SK3539 transistors. Designers may consider this equivalence when evaluating alternative components or legacy designs. No other specific substitute part numbers are documented in the provided source material.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V_DSS) is 50 V.

Does the device include protection features?

Yes, the XP04878 incorporates a built-in gate protection diode.

What is the maximum total power dissipation?

The total power dissipation (P_T) is rated at 150 mW.