XP10C150M

$1.01

Description：MOSFET N/P-CH 100V 2.5A 8SO
Series：XP10C150

SKU:2295f07e9149 Category: FET, MOSFET Arrays Brand: YAGEO XSEMI

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 100V 2.5A 8SO
Series：XP10C150
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Rds On (Max) @ Id, Vgs：150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.6nC @ 10V, 51.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：960pF @ 50V, 3040pF @ 50V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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XP10C150M

Overview

The XP10C150M is a dual MOSFET array manufactured by YAGEO XSemi, featuring complementary N-Channel and P-Channel enhancement mode transistors housed in an SO-8 surface-mount package. The device supports a drain-source breakdown voltage of 100 V for both channels and offers continuous drain currents of 3.2 A. It exhibits low on-resistance values of 135 mOhms for the N-Channel and 155 mOhms for the P-Channel. Key switching parameters include gate charges of 17.6 nC and 49.6 nC, with forward transconductance minimums of 10 S and 6.5 S respectively. The component operates within a temperature range of -55°C to +150°C and dissipates up to 2 W.

Feature Summary

Complementary dual configuration integrating N-Channel and P-Channel enhancement mode transistors in a single SO-8 package
High thermal stability supporting operation up to +150°C junction temperature
Low on-resistance characteristics optimized for efficient power switching applications

Applications

Motor control circuits requiring complementary drive signals
Power management systems utilizing half-bridge topologies
Industrial automation interfaces needing integrated switching solutions

Procurement Notes

Verify current availability status as this component may be subject to discontinuation notices. Confirm that the specific order suffix matches the required pinout and electrical specifications. Ensure compliance with RoHS directives and moisture sensitivity levels prior to integration into production schedules.

Selection Notes

Select this dual MOSFET array when space-constrained designs require matched N-Channel and P-Channel performance. Consider the 100 V rating and 3.2 A current capacity against load requirements. Evaluate the SO-8 package thermal dissipation limits relative to ambient operating conditions and heat sinking capabilities.

Part Context

This component belongs to the XP series of power semiconductors designed by YAGEO XSemi. The series targets automotive and industrial sectors, focusing on analog and power semiconductor solutions. The dual configuration simplifies circuit design by providing matched complementary devices in a compact footprint.