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XP10N3R8S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N CH 100V 132A TO-263. Review the specifications below when checking this part for your BOM.
The XP10N3R8S is a single N-channel silicon MOSFET manufactured by YAGEO XSemi. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 45.5A. The device exhibits a low on-resistance of 3.88 milliohms, facilitating efficient power switching. It operates within an ambient temperature range of -55°C to +150°C and utilizes a TO-263 surface-mount package for thermal management.
Verify the specific suffix against the official datasheet to confirm pinout and electrical tolerances. Ensure the ordering code matches the required packaging format. Cross-reference the manufacturer part number with authorized distributors to prevent counterfeit components. Confirm RoHS compliance status if required by your assembly specifications.
Select this component when high current handling and minimal conduction losses are critical. The TO-263 package offers a balance between current capacity and board space. Evaluate thermal resistance requirements based on the expected duty cycle and ambient conditions to ensure reliable operation under load.
This part belongs to the XP series of power MOSFETs from YAGEO XSemi. The series focuses on providing optimized solutions for power management applications. The numbering convention typically indicates voltage class and resistance characteristics, aiding in quick identification within the broader transistor portfolio.
Consult the official datasheet for exact pin-compatible alternatives. Verify that substitute parts meet or exceed the 100V rating and 3.88mOhm resistance specifications. Ensure thermal and mechanical dimensions match the existing PCB layout constraints.
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