Single FETs, MOSFETs XP2N075EN product image

XP2N075EN

$0.39
  • Description:MOSFET N-CH 20V 3.5A SOT23
  • Series:XP2N075E
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e14d8ade5ff1 Category: Brand:

  
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XP2N075EN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N-CH 20V 3.5A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for XP2N075EN

  • Description:MOSFET N-CH 20V 3.5A SOT23
  • Series:XP2N075E
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.4 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:832 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.25W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for XP2N075EN

XP2N075EN

Single FETs, MOSFETs Overview

The XP2N075EN is a single N-channel enhancement mode Power MOSFET manufactured by YAGEO XSEMI. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device features a drain-source voltage (Vds) rating of 20 V and supports a continuous drain current (Id) of 3.5 A at ambient temperature. Key electrical characteristics include a maximum on-state resistance (Rds(on)) of 0.075 ohms, a gate-source threshold voltage (Vgs(th)) of 1 V, and a total gate charge (Qg) of 22 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capability of 1.25 W.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration for low-side switching applications
  • Low on-state resistance for improved efficiency
  • Enhancement mode operation with standard logic-level gate drive compatibility

Single FETs, MOSFETs Applications

  • DC-DC converter output stages
  • Load switching circuits
  • Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with YAGEO XSEMI or authorized distributors. Confirm that the SOT-23 package dimensions and thermal characteristics align with your PCB layout requirements. Ensure compliance with RoHS directives as specified in the official product documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with 20 V breakdown and moderate current handling is required. The 0.075 ohm Rds(on) offers a balance between conduction loss and package size. Consider the 1.25 W power dissipation limit and ensure adequate thermal management for the SOT-23 footprint in high-duty-cycle applications.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSEMI, designed for general-purpose switching applications. The series emphasizes cost-effectiveness and performance through advanced silicon processing technologies. The XP2N075EN specifically targets small-signal power control needs where space constraints are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts with matching Vds, Id, and Rds(on) specifications. Verify pinout compatibility for direct replacement in existing designs.

XP2N075ENXP2N075EN
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