XP3C023AMT

XP3C023AMT

$0.97
  • Description:MOSFET N/P-CH 30V 12A PMPAK
  • Series:XP3C023A

SKU:cab62363d198 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 12A PMPAK
  • Series:XP3C023A
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 10A (Ta)
  • Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:19.2nC @ 4.5V, 21.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2320pF @ 15V, 2480pF @ 15V
  • Power - Max:3.57W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:PMPAK® 5 x 6
  • Grade:-
  • Qualification:-

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XP3C023AMT

Overview

The XP3C023AMT is a complementary MOSFET pair manufactured by YAGEO XSEMI, integrating an N-channel and a P-channel enhancement-mode transistor within a single package. The device features a drain-source breakdown voltage of 30V for the N-channel and -30V for the P-channel configuration. It utilizes silicon technology and is designed for surface-mount installation in the SO-8 form factor. This component supports continuous current handling capabilities suitable for power switching applications, operating reliably across a temperature range from -55°C to +150°C.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs into a single compact package
  • Supports surface-mount technology with enhanced thermal performance characteristics
  • Designed for high-efficiency power switching and signal routing applications

Applications

  • DC-DC converter circuits requiring synchronous rectification
  • Motor driver interfaces for low-voltage control systems
  • Power management modules for portable electronic devices

Procurement Notes

Verify the specific ordering suffix against official YAGEO XSEMI documentation to ensure correct pinout and electrical specifications. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Validate that the SO-8 package dimensions match your PCB footprint requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly.

Selection Notes

Select this component when a matched complementary pair is required for bridge or half-bridge topologies. Evaluate the 30V rating against peak circuit voltages to maintain adequate safety margins. Consider the SO-8 package for applications needing balanced thermal dissipation between both channels. Compare gate charge parameters against drive capability to ensure optimal switching speeds without excessive losses.

Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSEMI, which focuses on silicon-based discrete semiconductors. The series emphasizes cost-effective solutions for general-purpose power switching. Complementary pairs like the XP3C023AMT simplify design by reducing component count and ensuring matched thermal behavior between N and P channels.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout compatibility and voltage ratings. Verify that alternative packages do not require PCB layout modifications. Confirm that thermal resistance values are comparable to avoid overheating issues.

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