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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 11.2A 8SO
- Series：XP4509A
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：11.2A (Ta), 8A (Ta)
- Rds On (Max) @ Id, Vgs：10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1140pF @ 25V, 2000pF @ 25V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The XP4509AGM is a dual MOSFET array from YAGEO XSEMI, integrating complementary N-channel and P-channel devices in an 8-SOIC package. It features a 30 V drain-to-source voltage rating for both channels. The N-channel configuration supports a continuous drain current of 11.2 A with a maximum on-resistance of 0.01 ohms. The P-channel counterpart provides a continuous drain current of 8 A. The device operates within a junction temperature range of -55°C to 150°C and includes gate-source voltage limits of ±20 V.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact package
- Supports high-speed switching applications with low capacitance characteristics
- Designed for efficient power management in battery-powered systems
Applications
- Battery protection circuits
- Power management ICs
- Motor control applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required specifications. Check for RoHS3 compliance status if environmental regulations apply. Ensure storage conditions adhere to moisture sensitivity levels to prevent damage prior to assembly.
Selection Notes
Select this component for applications requiring integrated complementary switching with low on-resistance. Evaluate thermal performance against the specified junction temperature range. Consider the 8-SOIC package dimensions for PCB layout constraints. Verify that the 30 V rating aligns with the system's maximum operating voltages.
Part Context
This part belongs to the YAGEO XSEMI dual MOSFET family, designed for space-constrained power electronics. It complements other discrete FET solutions by offering integrated N and P channel functionality. The series targets cost-sensitive consumer and industrial markets requiring reliable switching performance.
Replacement Considerations
The XP3C011M is listed as a suggested substitute by the manufacturer. Verify pin compatibility and electrical parameters before substitution.
