XP4NA1R4CMT-A

Single FETs, MOSFETs Overview

The XP4NA1R4CMT-A is a single N-channel enhancement mode power MOSFET manufactured by YAGEO XSEMI. It features a drain-source voltage (Vdss) of 45 V and a continuous drain current (Id) of 49 A at ambient temperature, rising to 223 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.4 milliohms when driven at 10 V with a 20 A current. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3 V max at 250 µA, a total gate charge (Qg) of 75.2 nC at 4.5 V, and an input capacitance (Ciss) of 7200 pF at 20 V. The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-PMPAK surface-mount package.

Single FETs, MOSFETs Feature Summary

• Low on-resistance design for high-efficiency power switching applications
• Enhanced thermal performance supporting high case temperature current ratings
• Robust gate structure ensuring reliable operation under standard drive conditions

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Motor control circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical characteristics required for the target circuit design. Cross-reference the RoHS compliance status and moisture sensitivity level with current regulatory requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in a compact surface-mount footprint. Evaluate the thermal resistance capabilities relative to the expected heat dissipation in the application environment. Confirm that the gate drive voltage aligns with the specified thresholds for optimal Rds(on) performance and switching efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the XP4NA1R4C series of N-channel power MOSFETs from YAGEO XSEMI. The series utilizes silicon technology optimized for low on-resistance and fast switching speeds. The PMPAK package provides a balance between thermal conductivity and board space efficiency for modern electronic equipment.

Single FETs, MOSFETs Replacement Considerations

Consult the official YAGEO XSEMI documentation for verified substitute part numbers. Do not assume compatibility based solely on package similarity or generic parameter ranges without cross-referencing specific electrical limits.