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XP60SA380DIT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N CH 600V 10A TO-220CFM-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for XP60SA380DIT
- Description：MOSFET N CH 600V 10A TO-220CFM-
- Series：XP60SA380D
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1216 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：1.92W (Ta), 31.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220CFM
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for XP60SA380DIT
Single FETs, MOSFETs Overview
The XP60SA380DIT is an N-channel enhancement mode power MOSFET from YAGEO XSEMI. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 10 A. The device exhibits a maximum on-resistance (Rds(on)) of 380 mOhms at standard test conditions. Key electrical parameters include a gate charge of 36 nC at 10 V, input capacitance of 1216 pF at 100 V, and a maximum power dissipation of 1.92 W. The gate-source voltage rating is ±20 V.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for reliable switching applications
- Low on-resistance characteristic to minimize conduction losses
- Robust drain-source breakdown voltage capability for high-voltage systems
Single FETs, MOSFETs Applications
- Power supply circuits requiring high-voltage switching
- Motor control applications utilizing single FET configurations
- General-purpose power management systems
Single FETs, MOSFETs Procurement Notes
Verify the exact part number suffix against official YAGEO documentation to ensure correct packaging and tape-and-reel specifications. Confirm lead times with authorized distributors as manufacturing schedules may vary. Ensure compatibility with existing PCB footprints designated for TO-220CFM-T packages before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V N-channel MOSFET with low Rds(on) is required in a TO-220CFM-T package. Consider the 10 A continuous current rating and 1.92 W power dissipation limits relative to thermal management capabilities. Evaluate gate charge requirements against driver capabilities for optimal switching performance.
Single FETs, MOSFETs Part Context
This component belongs to the YAGEO XSEMI series of discrete power semiconductors. It is designed for general-purpose power switching applications where efficiency and voltage handling are critical. The TO-220CFM-T package provides mechanical stability and thermal conductivity suitable for through-hole mounting strategies.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.
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