XP6932MT

$0.42

Description：MOSFET 2N-CH 30V 14.2A 8PMPAK
Series：XP6932

SKU:3067aa7bbf3d Category: FET, MOSFET Arrays Brand: YAGEO XSEMI

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 14.2A 8PMPAK
Series：XP6932
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：14.2A (Ta), 28A (Tc), 22.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs：5.5mOhm @ 14A, 10V, 2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.4nC @ 10V, 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1712pF @ 15V, 3920pF @ 15V
Power - Max：1.78W (Ta), 2.08W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：8-PMPAK (5x6)
Grade：-
Qualification：-

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XP6932MT

Overview

The XP6932MT is a dual N-channel Power MOSFET manufactured by YAGEO XSemi. It features a 30V drain-source voltage rating and operates in enhancement mode. The component integrates two channels with continuous drain currents of 14.2A and 22.9A respectively. It utilizes the PMPAK-8 surface-mount package, supporting SMD/SMT installation. Key electrical parameters include a maximum gate-source voltage of 20V and a power dissipation capacity of 5W. The device is designed for efficient switching applications within specified thermal limits.

Feature Summary

Dual N-channel configuration for complementary circuit integration
Low on-resistance characteristics for high efficiency
Robust thermal performance in compact PMPAK-8 packaging

Applications

DC-DC converter circuits
Motor control systems
Power management modules

Procurement Notes

Verify the manufacturer part number XP6932MT against official YAGEO XSemi documentation to ensure authenticity. Confirm that the received components match the specified PMPAK-8 package and electrical ratings. Check for any specific handling requirements related to moisture sensitivity levels as indicated in the datasheet. Ensure compliance with RoHS directives if required for the target application.

Selection Notes

Select this component when a dual N-channel solution is required for low-voltage switching applications. The 30V rating suits battery-powered or low-voltage DC systems. Consider the PMPAK-8 package for space-constrained PCB designs. Evaluate the combined current capabilities against load requirements to ensure adequate thermal headroom during operation.

Part Context

This component belongs to the XP series of Power MOSFETs from YAGEO XSemi. The series focuses on silicon-based technology optimized for power conversion efficiency. The dual-channel design allows for simplified circuit layouts in bridge configurations or high-current single-channel applications requiring redundant paths.