XP6A038MT

Overview

The XP6A038MT is a dual N-channel MOSFET manufactured by YAGEO XSemi. It features a 60 V drain-source voltage and a continuous drain current of 16.2 A. The device has a maximum on-resistance of 0.038 ohms. It utilizes the PMPAK-5x6 surface-mount package. The component operates within a temperature range from -55 C to +150 C. Gate-source voltage is rated at 20 V. Power dissipation is specified at 5 W. The technology is silicon-based enhancement mode.

Feature Summary

• Dual configuration integrating two independent N-channel transistors in a single package
• Low on-resistance for efficient power switching applications
• Extended operating temperature range suitable for demanding environments

Applications

• Power management circuits requiring dual channel control
• Motor driver interfaces
• Load switching applications

Procurement Notes

Verify the specific datasheet version and ordering suffixes with the manufacturer or authorized distributors before procurement. Confirm that the PMPAK-5x6 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies align with the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage high-current applications. Consider the 60 V rating and 0.038 ohm resistance for efficiency needs. Evaluate the PMPAK-5x6 package for space constraints compared to discrete single-channel alternatives.

Part Context

This part belongs to the YAGEO XSemi MOSFET portfolio, focusing on surface-mount power devices. The XP series typically targets automotive and industrial sectors. Dual configurations offer board space savings compared to using separate single-channel components.

FAQ

What is the package type for the XP6A038MT?

The XP6A038MT uses the PMPAK-5x6 surface-mount package.

Is the XP6A038MT a single or dual transistor?

It is a dual N-channel MOSFET containing two independent channels.