YQ8RSM10SDTL1

Single Diodes Overview

The YQ8RSM10SDTL1 is a single-configuration Schottky Barrier Diode manufactured by ROHM Semiconductor. It utilizes a trench MOS structure to achieve high efficiency with low forward voltage and low reverse current. The device operates in a TO-277GE surface-mount package with three terminals. Key electrical parameters include a maximum repetitive peak reverse voltage of 100 V, an average rectified forward current of 8 A, and a maximum forward voltage of 0.67 V at 8 A. The component supports a maximum junction temperature of +175 °C and features a reverse current of 0.06 mA.

Single Diodes Feature Summary

• Employs a proprietary trench MOS structure for superior switching performance
• Optimizes the trade-off between low forward voltage and low reverse leakage current
• Delivers ultra-fast reverse recovery time (trr) of 15 ns
• Constructed with a power mold type for enhanced reliability

Single Diodes Applications

• Switching power supplies
• Freewheel diodes
• Reverse polarity protection circuits

Single Diodes Procurement Notes

Verify the specific suffix TL1 indicates the taping packaging format containing 4000 units per reel. Confirm RoHS compliance status through official documentation. Ensure the TO-277GE package dimensions match the design constraints. Validate that the standard grade classification meets the application requirements without automotive certification.

Single Diodes Selection Notes

Select this component when high-efficiency rectification is required in compact surface-mount designs. The trench MOS technology offers lower total switching loss compared to standard planar structures. Consider the 100 V rating and 8 A current capacity for appropriate thermal management. The 175 °C junction temperature capability allows for operation in demanding thermal environments.

Single Diodes Part Context

This part belongs to the YQ series, which represents ROHM's first generation of diodes utilizing trench MOS technology. The series is designed to improve upon traditional planar structures by reducing switching losses significantly. The YQ8RSM10SD variant specifically targets applications requiring fast recovery characteristics while maintaining low conduction losses.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.