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The ZC830ATA is a silicon hyperabrupt varactor diode manufactured by Diodes Incorporated, originally from the Zetex Semiconductors portfolio. It features closely controlled capacitance-voltage (CV) characteristics and high Q factors for frequency control applications. Key electrical parameters include a peak reverse voltage of 25 V, a typical reverse current of 200 pA, and a capacitance ratio of 6.5 at C2/C20 conditions. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOT-23-3 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential obsolescence. Check for RoHS3 compliance status and confirm availability of replacement packages if original stock is depleted. Validate datasheet revisions against specific production batches to ensure parameter consistency.
Select this component when low phase noise and high tuning sensitivity are required in compact designs. Ensure the operating voltage range aligns with the hyperabrupt characteristic curve. Consider thermal management requirements given the wide operating temperature range and surface-mount form factor constraints.
This part belongs to the ZC830 series of silicon hyperabrupt varactor diodes. It shares functional similarities with the ZC832ATA but differs in specific CV characteristics and package options. The series was historically produced by Zetex Semiconductors before integration into Diodes Incorporated's portfolio.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent hyperabrupt varactors from other manufacturers based on matching capacitance ratios, Q values, and reverse voltage ratings.