ZC830ATC

Overview

The ZC830ATC is a single hyperabrupt silicon varactor diode manufactured by Diodes Incorporated. It features a maximum peak reverse voltage of 25 V and is housed in an SOT-23-3 surface-mount package. Key electrical parameters include a capacitance of 10.5 pF at 2 V and 1 MHz, with a Q factor of 300 at 3 V and 50 MHz. The device exhibits a capacitance ratio of 6.0 (measured as C2/C20) and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Hyperabrupt capacitance-voltage characteristics for precise frequency tuning
• High quality factor ensuring low phase noise performance
• Low reverse leakage current typical of 200 pA

Applications

• Voltage-Controlled Crystal Oscillators (VCXO)
• Temperature-Compensated Crystal Oscillators (TCXO)
• Wireless communication systems
• Mobile radio equipment

Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS3 compliance and check for specific suffix variations that may indicate packaging or environmental differences. Validate datasheet revisions against the manufacturing date code to ensure parameter consistency.

Selection Notes

Select this component when high Q factors and tight capacitance tolerances are required for oscillator stability. Ensure the 25 V reverse voltage rating exceeds the maximum applied bias in the circuit design. Consider the SOT-23-3 footprint constraints during PCB layout planning.

Part Context

This part belongs to the ZC830 series of hyperabrupt varactor diodes originally developed by Zetex Semiconductors before acquisition by Diodes Incorporated. The series is designed for applications requiring high tuning ratios and low phase noise in miniature surface-mount packages.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs if sourcing from alternative distributors.