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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2A SOT-223-8
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ZDM4306NTA is a dual N-channel enhancement mode MOSFET in an SM-8 (SOT-223) package. It features a drain-source voltage of 60V and a continuous drain current of 2A at 25°C. The static on-state resistance is 0.32Ω max at VGS=5V, ID=1.5A, or 0.45Ω max at VGS=10V, ID=3A. Gate-source threshold voltage ranges from 1.3V to 3V. Total power dissipation reaches 3.0W with both dies active. Thermal resistance is 41.6°C/W for dual operation.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode MOSFETs within a single surface-mount package.
- Logic-level gate drive capability allowing direct interface with standard logic circuits via low threshold voltage specifications.
- High current handling capacity supporting up to 2A continuous drain current per channel under standard thermal conditions.
Applications
- DC-DC converter synchronous rectification stages
- Low-side switching applications in power management circuits
- Motor control driver interfaces requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm tape-and-reel packaging and pinout compatibility. Confirm RoHS compliance status through official datasheets before integration into regulated assemblies. Ensure thermal design accounts for derating curves above 25°C ambient temperature to maintain reliability.
Selection Notes
Select this component when dual isolated channels are required in a compact SOT-223 footprint. Evaluate thermal performance based on PCB copper area, as power dissipation ratings assume typical mounting on a 2-inch square copper pad. Compare RDS(on) values at intended gate drive voltages to ensure efficiency targets are met.
Part Context
This device belongs to Diodes Incorporated's series of dual MOSFET arrays designed for space-constrained power applications. The SM-8 package provides a balance between thermal performance and board real estate efficiency compared to larger discrete packages.
Replacement Considerations
Check electrical parameter alignment, specifically VDS, ID, and RDS(on), when evaluating substitutes. Verify pinout compatibility for the SM-8/SOT-223-8 package to avoid rework. Consult manufacturer cross-reference lists for confirmed equivalent part numbers.
