SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZDT1049 is a dual NPN medium-power high-gain transistor housed in an SM-8 package. It features two independent NPN transistors within a single molded plastic component with matte tin plated leads. The device supports a continuous collector current of 5 A and withstands a collector-emitter voltage of 25 V. Key electrical parameters include a collector-base breakdown voltage of 80 V, a peak pulse current of 20 A, and a transition frequency of 180 MHz at 50 mA. Total power dissipation reaches 2.75 W when both dies are active equally. The operating temperature range spans from -55°C to +150°C.
Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Suffixes determine specific packaging formats, tape-and-reel quantities, and automotive qualification levels such as PPAP capability. Confirm that the selected variant matches the required flammability rating and terminal finish specifications for the target assembly process.
Evaluate the total power dissipation requirements carefully, noting that derating applies above 25°C ambient temperature. Ensure the design accounts for the distinct thermal resistance values depending on whether one or both dies are active simultaneously. Verify that the base drive currents can support the specified saturation voltages at the intended load conditions.
This component belongs to Diodes Incorporated's family of dual medium-power transistors designed for space-constrained applications. It serves as a consolidated alternative to discrete single transistors, reducing board footprint while maintaining high current handling capabilities. The SM-8 package provides a standardized mounting solution for surface mount technology processes.
Consult the manufacturer's official obsolescence notices. The datasheet explicitly states that the ZDT1049 is not recommended for new designs. Contact Diodes Incorporated directly for approved replacement part numbers or updated product recommendations.