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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 12V 5A SM-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：5A
- Voltage - Collector Emitter Breakdown (Max)：12V
- Vce Saturation (Max) @ Ib, Ic：380mV @ 50mA, 5A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 500mA, 2V
- Power - Max：2.75W
- Frequency - Transition：115MHz
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM-8
- Grade：-
- Qualification：-
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Overview
The ZDT1147TA is a dual PNP medium-power Darlington transistor array manufactured by Diodes Incorporated. It is housed in an SM-8 (SOT-223-8) surface-mount package, designed for high-current switching applications. The device features two independent PNP transistors with a maximum collector current of 5A and a collector-emitter breakdown voltage of 12V. Key electrical specifications include a transition frequency of 115MHz and a maximum power dissipation of 2.75W. This component integrates Darlington pairs to provide high current gain, suitable for driving loads requiring significant amplification within compact electronic designs.
Feature Summary
- Dual PNP Darlington configuration for high current gain
- SM-8 surface-mount package for space-efficient integration
- Designed for high-current switching operations
Applications
- High-current switching circuits
- Power management modules
- Industrial control systems
Procurement Notes
Verify the specific datasheet version from Diodes Incorporated to confirm exact electrical characteristics and thermal resistance values. Ensure the SM-8 package footprint matches the PCB design requirements. Cross-reference pinout diagrams to prevent installation errors during assembly. Confirm that the operating temperature range aligns with the intended environmental conditions of the final product.
Selection Notes
Select this component when high current gain and compact packaging are required for PNP switching applications. The 5A collector current rating supports substantial load driving capabilities. Consider the 12V breakdown voltage limit when designing circuits with higher supply rails. The SOT-223-8 form factor offers a balance between power handling and board space efficiency compared to larger through-hole alternatives.
Part Context
This part belongs to the discrete bipolar junction transistor (BJT) array category from Diodes Incorporated. It utilizes Darlington topology to achieve high current amplification within a dual-channel configuration. The SM-8 package provides robust thermal performance relative to its small outline dimensions. It serves as a solution for applications needing multiple high-gain switching elements in a single surface-mount device.
Replacement Considerations
Check for direct substitutes such as other dual PNP Darlington arrays in SM-8 packages from Diodes Incorporated or compatible manufacturers. Verify that replacement parts match the 5A current rating and 12V voltage specifications. Ensure pin compatibility and thermal characteristics are equivalent to maintain circuit performance without redesign.
FAQ
What is the maximum collector current for each transistor in the ZDT1147TA?
Each transistor in the dual PNP array can handle a maximum collector current of 5A.
Does the ZDT1147TA use NPN or PNP transistors?
The ZDT1147TA contains dual PNP transistors configured in a Darlington arrangement.
