ZDT619TA

ZDT619TA

  • Description:TRANS 2NPN DUAL 50V 2A SM8
  • Series:-

SKU:bf11532657cf Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 2A SM8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):2A
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 50mA, 2A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
  • Power - Max:2.5W
  • Frequency - Transition:165MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-223-8
  • Supplier Device Package:SM8
  • Grade:-
  • Qualification:-

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ZDT619TA

Overview

The ZDT619TA is a dual NPN medium power high gain transistor manufactured by Diodes Incorporated. It integrates two independent NPN transistors within an SM-8 (SOT-223) package. The device supports a continuous collector current of 2A and withstands collector-emitter and collector-base voltages up to 50V. Electrical characteristics include a minimum static forward current transfer ratio (hFE) of 200 at 10mA, a transition frequency (fT) of 100MHz, and a peak pulse current capability of 6A. Thermal performance allows for total power dissipation of 2W per die or 2.5W when both dies operate equally.

Feature Summary

  • Dual NPN configuration providing two independent switching elements in a single surface-mount package
  • High current handling capability with a 2A continuous collector rating
  • Elevated voltage tolerance supporting 50V across collector-emitter and collector-base terminals

Applications

  • General-purpose switching circuits requiring dual independent control
  • Medium power amplifier stages utilizing high current gain
  • Driver applications for loads operating within the specified voltage and current limits

Procurement Notes

Verify the component authenticity against the manufacturer's official datasheet specifications. Confirm that the SM-8 package marking matches the T619 identifier. Ensure the selected variant meets the required thermal management standards for the intended operating environment.

Selection Notes

Select this component when a dual NPN topology is required for space-constrained designs. Evaluate the thermal resistance values to ensure adequate heat dissipation on the PCB. Consider the hFE range and saturation voltages to verify compatibility with the driving circuit requirements.

Part Context

This part belongs to the ZDT619 series of dual NPN transistors. It shares the same electrical profile as the ZHT619 but utilizes the SM-8 package instead of the TO-220 style housing. The series is designed for applications needing multiple high-gain switching elements in a compact form factor.

Replacement Considerations

ZHT619

ZDT619TAZDT619TA

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