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The ZDT619TA is a dual NPN medium power high gain transistor manufactured by Diodes Incorporated. It integrates two independent NPN transistors within an SM-8 (SOT-223) package. The device supports a continuous collector current of 2A and withstands collector-emitter and collector-base voltages up to 50V. Electrical characteristics include a minimum static forward current transfer ratio (hFE) of 200 at 10mA, a transition frequency (fT) of 100MHz, and a peak pulse current capability of 6A. Thermal performance allows for total power dissipation of 2W per die or 2.5W when both dies operate equally.
Verify the component authenticity against the manufacturer's official datasheet specifications. Confirm that the SM-8 package marking matches the T619 identifier. Ensure the selected variant meets the required thermal management standards for the intended operating environment.
Select this component when a dual NPN topology is required for space-constrained designs. Evaluate the thermal resistance values to ensure adequate heat dissipation on the PCB. Consider the hFE range and saturation voltages to verify compatibility with the driving circuit requirements.
This part belongs to the ZDT619 series of dual NPN transistors. It shares the same electrical profile as the ZHT619 but utilizes the SM-8 package instead of the TO-220 style housing. The series is designed for applications needing multiple high-gain switching elements in a compact form factor.
ZHT619