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The ZDT6702QTA is a complementary medium-power Darlington transistor pair manufactured by Diodes Incorporated. It integrates NPN and PNP transistors in an SM-8 package, designed for automotive applications requiring specific change control. The device supports continuous collector currents of ±1.75 A with peak pulse currents up to ±4 A. Collector-emitter breakdown voltages are rated at 60 V for both polarities. Total power dissipation reaches 2.75 W when both dies operate equally at +25°C ambient temperature. The component operates within a junction temperature range of -55°C to +150°C.
Verify the exact ordering suffix against the manufacturer's current catalog before purchase. Confirm that the SM-8 package dimensions match your PCB footprint requirements. Ensure the supplier provides traceability documentation required for automotive-grade parts. Check for any recent product change notifications or end-of-life notices from Diodes Incorporated.
Evaluate the total power dissipation limits carefully when designing for simultaneous NPN and PNP conduction. Consider the thermal resistance values provided for different die activation states. Verify that the base drive currents can support the specified saturation voltages at maximum load. Assess the transition frequency characteristics if high-speed switching performance is critical for the application.
This component belongs to the ZDT series of complementary Darlington transistors produced by Diodes Incorporated. The SM-8 package offers a compact solution for integrating matched transistor pairs. The datasheet indicates this specific part is not recommended for new designs, suggesting engineers should consult the manufacturer for alternative solutions.
Consult Diodes Incorporated directly for approved substitute part numbers. Verify compatibility regarding the SM-8 package outline and pin configuration. Ensure replacement devices meet the same automotive qualification standards and thermal ratings.