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Product Detailed Parameters
- Description：TRANS NPN/PNP DARL 60V 1.75A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP Darlington (Dual)
- Current - Collector (Ic) (Max)：1.75A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：1.28V @ 2mA, 1.75A
- Current - Collector Cutoff (Max)：500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：5000 @ 500mA, 5V / 2000 @ 500mA, 5V
- Power - Max：2.75W
- Frequency - Transition：140MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZDT6702TA is a complementary medium-power Darlington transistor array manufactured by Diodes Incorporated. It integrates one NPN and one PNP Darlington pair within an SM-8 (SOT-223-8) surface-mount package. The device supports a maximum collector-emitter voltage of 60V for both polarities and handles a continuous collector current of 1.75A. Total power dissipation reaches 2.75W when both die are active equally at +25°C, with a transition frequency of 140MHz. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- Complementary dual-channel configuration integrating matched NPN and PNP Darlington pairs
- High DC current gain capability exceeding 5000 under standard test conditions
- Robust thermal management supporting up to 2.75W total power dissipation in the SM-8 package
Applications
- Automotive applications requiring AEC-Q100/101/104/200 qualified components
- Motor control circuits utilizing high-gain switching stages
- Power management systems requiring complementary output stages
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the specific order matches the ZDT6702TA suffix requirements. Ensure compliance with RoHS3 and REACH regulations as documented in the manufacturer's environmental statements prior to final procurement authorization.
Selection Notes
Evaluate the 60V collector-emitter breakdown voltage against peak circuit transients. Assess the 1.75A continuous current rating relative to load requirements. Consider the 2.75W power dissipation limit and derating curves above +25°C to ensure adequate thermal design margins for the intended operating environment.
Part Context
This component belongs to the ZDT6702 series of complementary medium-power Darlington transistors. It is designed for applications requiring integrated NPN/PNP switching capabilities. The device utilizes molded plastic construction with matte tin plated leads suitable for standard surface mount assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Diodes Incorporated directly for alternative recommendations or updated product line information.
