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The ZDT694TA is a dual NPN medium power high gain transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage exceeding 120V and supports a continuous collector current of 0.5A per die. The device provides a minimum DC current gain (hFE) of 400 at 200mA. Electrical characteristics include a maximum collector-base saturation voltage of 0.50V at 0.4A, a transitional frequency of 130MHz, and a collector power dissipation of 2.75W when both dies are active. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation before procurement. The 'TA' suffix indicates tape-and-reel packaging containing 1,000 units. Confirm that the component meets all necessary regulatory standards for the intended deployment environment. Ensure compatibility with existing supply chain requirements and quality certifications prior to finalizing orders.
Select this component for designs requiring dual NPN transistors with high voltage ratings above 120V. Verify that the required continuous current does not exceed 0.5A per channel. Consider the SM-8 package dimensions for PCB layout constraints. Evaluate thermal management strategies if operating near the maximum power dissipation limits.
The ZDT694TA belongs to the ZDT694 family of dual NPN transistors from Diodes Incorporated. This series is designed for medium power applications utilizing the SM-8 package. The datasheet explicitly states that the ZDT694 is not recommended for new designs, indicating it may be a legacy or end-of-life product within the manufacturer's portfolio.
The datasheet advises contacting the manufacturer regarding design updates. No direct public substitute part numbers are listed in the provided documentation. Engineers should consult Diodes Incorporated for current equivalent components suitable for new designs.