SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZDT717TA is a dual PNP medium power high gain transistor manufactured by Diodes Incorporated. It features an SM-8 (SOT-223) package with eight leads, housing two independent PNP transistors. The device supports a continuous collector current of -2.5 A and withstands collector-emitter voltages up to -12 V. Electrical characteristics include a transition frequency of 80 MHz minimum and static forward current transfer ratios ranging from 45 to 300 depending on operating conditions. Thermal dissipation capabilities reach 2 W for a single die or 2.5 W when both dies operate equally at 25°C ambient temperature.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging format and compliance status. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revision dates to validate electrical parameters before integration into final designs.
Select this component for applications requiring dual PNP switching with moderate power handling capabilities. Evaluate thermal resistance values relative to PCB copper area constraints. Confirm that peak pulse current ratings align with transient load requirements during circuit operation.
This part belongs to the ZDT717 series of dual PNP medium power transistors. It shares functional similarities with other high-gain dual transistor families but distinguishes itself through its specific SM-8 pinout and thermal characteristics designed for compact board layouts.
ZUMT717TA serves as a potential alternative offering similar functionality in a smaller SOT323 package.