ZDT751TA

Overview

The ZDT751TA is a dual PNP medium-power transistor manufactured by Diodes Incorporated in an SM-8 surface-mount package. It contains two independent PNP transistors within a single component, rated for a continuous collector current of -2 A and a collector-emitter voltage of -60 V. The device features a maximum power dissipation of 2.75 W when both dies are active equally at +25°C ambient temperature. Electrical characteristics include a transition frequency (fT) of 140 MHz and a static forward current transfer ratio (hFE) ranging from 40 to 300 depending on the operating current. The unit operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration containing two independent PNP transistors in a single compact SM-8 package
• Qualified for automotive applications with specific change control requirements under AEC-Q100/101 standards
• Designed for high-frequency performance with a transition frequency of 140 MHz
• Utilizes molded plastic material with UL flammability rating 94V-0 and matte tin plated leads

Applications

• Automotive electronic systems requiring components qualified to AEC-Q100/101/104/200 standards
• Medium-power switching circuits utilizing dual independent channels
• High-speed signal processing applications leveraging the 140 MHz transition frequency

Procurement Notes

Verify the exact ordering suffix to confirm the specific tape-and-reel quantity and packaging format required for your assembly line. Confirm that the procurement channel is authorized by Diodes Incorporated to ensure product authenticity and adherence to standard terms of sale. Check for any recent Product Change Notifications (PCN) regarding manufacturing facility updates or material changes before placing orders.

Selection Notes

Evaluate the thermal resistance values carefully, as total power dissipation decreases significantly if only one die is active compared to both being active equally. Ensure the application circuit maintains the base-emitter voltage within the -5 V absolute maximum rating to prevent breakdown. Consider the pulsed measurement conditions for saturation voltages and hFE, which apply a 300µs pulse width and a duty cycle of 2% or less.

Part Context

The ZDT751 belongs to the ZDT series of dual medium-power transistors produced by Diodes Incorporated. This series provides integrated solutions for designs requiring multiple matching or independent bipolar junction transistors in a space-constrained footprint. The SM-8 package offers a balance between thermal performance and board space efficiency for surface-mount technology applications.

Replacement Considerations

Diodes Incorporated states that the ZDT751 is not recommended for new designs. Customers should contact the manufacturer or local representatives directly to discuss alternative components suitable for new development projects.