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The ZMV830BTA is a silicon hyperabrupt varactor diode from the 830 series, manufactured by Diodes Incorporated (formerly Zetex). It features closely controlled capacitance-voltage characteristics and high Q-factor performance. The device operates with a reverse breakdown voltage of 5V at 10µA leakage current and maintains low reverse leakage of typically 20nA at 20V. Electrical specifications include a nominal capacitance of 10pF at 2V/1MHz, a minimum Q of 300 at 3V/50MHz, and a capacitance ratio (C2/C20) between 4.5 and 6.0. It supports an operating temperature range of -55°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated channels or regional distributors. Confirm package variant matches design requirements as the 830 series spans multiple footprint types. Check datasheet revision history for any parameter updates prior to finalizing procurement orders.
Select this component when specific hyperabrupt tuning curves are required for narrowband filtering or oscillator stabilization. Compare against the 930 series if higher reverse bias voltages or different capacitance ratios are needed. Ensure thermal dissipation limits align with the selected package type during circuit layout.
This part belongs to the 830 series of silicon hyperabrupt varactor diodes originally developed by Zetex Semiconductors plc before acquisition by Diodes Incorporated. The series offers single and dual common cathode configurations across various surface mount footprints for RF tuning applications.
ZMV830ATA serves as the alternative order code for 7-inch reel packaging compared to the BTA suffix.