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Product Detailed Parameters
- Description：RF TRANS NPN 15V 1.3GHZ E-LINE
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：1.3GHz
- Noise Figure (dB Typ @ f)：5dB @ 500MHz
- Gain：53dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 2mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：E-Line-3, Formed Leads
- Supplier Device Package：E-Line (TO-92 compatible)
- Grade：-
- Qualification：-
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Overview
The ZTX325STOB is an NPN silicon planar RF transistor manufactured by Diodes Incorporated. It operates in the E-Line (TO-92 compatible) through-hole package with three pins. Key electrical parameters include a collector-base voltage of 30 V, collector-emitter voltage of 15 V, and emitter-base voltage of 2.5 V. The device supports a maximum collector current of 50 mA and power dissipation of 350 mW at 25°C. It features a transition frequency up to 1.3 GHz and a noise figure of 5.0 dB at 500 MHz.
Feature Summary
- High transition frequency capability reaching 1.3 GHz for UHF band applications
- Low noise performance suitable for sensitive RF signal processing
- Robust thermal stability with an operating junction temperature range extending to +200 °C
Applications
- UHF band amplification circuits
- RF oscillator stages
- Low noise amplifier designs
Procurement Notes
Verify component authenticity against manufacturer specifications before integration. Confirm package compatibility and pinout alignment with design requirements. Ensure storage conditions maintain moisture sensitivity level integrity. Review datasheet revisions for any parameter updates prior to final procurement authorization.
Selection Notes
Select this component for high-frequency applications requiring low noise figures and stable gain characteristics. Evaluate thermal management strategies given the 350 mW power dissipation limit. Compare transition frequency requirements against circuit operating frequencies to ensure adequate performance margins under varying bias conditions.
Part Context
This part belongs to the ZTX series of RF transistors designed for high-frequency operations. It utilizes silicon planar technology within a standard TO-92 compatible housing. The series targets applications demanding reliable performance in UHF bands with specific noise and gain constraints.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference electrical parameters such as transition frequency, noise figure, and voltage ratings when evaluating alternative components.
